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Fast Magnetoelectric Device Based on Current-driven Domain Wall Propagation

Technology #20160364

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MagnetoelectricSpintronics
Categories
Researchers
Jian-Ping Wang, PhD
Professor, Electrical and Computer Engineering
External Link (ece.umn.edu)
Sachin S. Sapatnekar, PhD
Professor, Electrical and Computer Engineering
External Link (ece.umn.edu)
Chris (Hyung-il) Kim, PhD
Professor, Electrical and Computer Engineering
External Link (ece.umn.edu)
Managed By
Kevin Nickels
Technology Licensing Officer 612-625-7289
Patent Protection

US Patent Pending
Publications
CoMET: Composite- Input Magnetoelectric-based Logic Technology
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol. 3, pp. 27 – 36, 06 April 2017
A Fast Magnetoelectric Device Based on Current-driven Domain Wall Propagation
Proceedings of the IEEE Device Research Conference, 19-22 June 2016

Fast, Efficient, Low Power Spintronic Circuit

An electronic spintronic-based circuit device transmits a voltage from an input to an output in an energy efficient, fast and low-power manner. The device is comprised of an input ferroelectric (FE) capacitor and an output FE capacitor, each magnetically coupled to a ferromagnetic (FM) channel beneath the capacitors. When the input FE capacitor receives an input signal, it causes a magnetic signal (resulting from Spin-Transfer Torque (STT) in the FM channel) to pass through the FM channel to the output FE capacitor, causing a voltage change at the output FE capacitor. The electronic device may also include a transistor-based drive circuit electrically connected to the output node of the output FE capacitor to drive a second circuit device. Complex logic circuits can be formed by coupling input FE capacitors and output FE capacitors using these techniques.

Potential CMOS Replacement

Other spin logic solutions tend to be slow and power-hungry, and while current magnetoelectric and domain wall (DW) devices are energy efficient, they are also slow. This new device is both energy efficient and fast, and could potentially replace the CMOS transistor.

BENEFITS AND FEATURES:

  • Fast magnetoelectric device based on current driven DW motion
  • Low energy device
  • Scalable geometries
  • Micromagnetic simulation for DW nucleation
  • APPLICATIONS:

  • Potential CMOS transistor replacement
  • Phase of Development - Proof of Concept

    Interested in Licensing?
    The University relies on industry partners to scale up technologies to large enough production capacity for commercial purposes. The license is available for this technology and would be for the sale, manufacture or use of products claimed by the issued patents. Please contact Kevin Nickels to share your business needs and technical interest in this technology and if you are interested in licensing the technology for further research and development.