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20140327 – A material with high saturation magnetization with low magnetocrystalline anisotropy—and therefore low coercivity—is expressed as α″-Fe16(NxZ1-x)2 (Z= C, B, O). This first of its kind combination of magnetic properties results from adding carbon dopants to the interstitial position of an iron lattice, where saturation magnetization remains almost same, but magnetocrystalline anisotropy... Read More
20160423 – A two-terminal memory device combines the spin Hall effect for switching/writing and unidirectional spin Hall magnetoresistance (USMR) for detection/reading. The memory device, with two-terminal write and read operations, acts like an MTJ but carries greater switching efficiency. To write, a strong pulse is applied across the device so that spins are generated by spin Hall effect in the... Read More
20150186 – A new material structure allows switching of perpendicular magnetization (using the spin Hall effect) without an externally applied magnetic field. This design for spin based memory and logic devices is compatible with current standard CMOS technology. It can be incorporated with low energy, nonvolatile memory and logic structures and provides an alternative means to write data stored in... Read More
20150029 – A new method for fabricating chip inductors uses chemical deposition to prepare soft magnet material (including iron, nitrogen, and carbon, boron, or oxygen) on different substrates. The multi-layer structures are made with chemical vapor deposition (CVD) and liquid phase epitaxy (LPE). With giant saturation magnetization, this method obtains an integrated inductance with ideal soft... Read More
20100207 – A newly designed magnetic tunnel junction (MTJ) device features a fixed magnetic layer with magnetic anisotropy out of the film plane (e.g., a generally perpendicular magnetic anisotropy) with a tunnel barrier layer on one side of the fixed magnetic layer. A stack of bilayers with magnetic anisotropy outside the film plane is adjacent to a second side of the fixed magnetic layer. The... Read More
20170173 – Composite CoFeB/Gd/CoFeB and CoFeB/Gd/Heusler stacks with bulk perpendicular magnetic anisotropy (PMA) have antiferromagnetic coupled magnetic structures and therefore a very small saturated magnetization (Ms). These stacks feature bulk perpendicular magnetic anisotropy that could be prepared onto any kind of seed layers. The design offers advantages in selecting good spin Hall channel... Read More
20140235 – A spin based logic device uses spin pumping and spin transfer torque (STT) nano-oscillator for its operation. The device includes a spin channel to transport a spin current, a nano-oscillator and a magnetoresistive device that receives the spin current from the nano-oscillator. The nano-oscillator includes a magnetization state that oscillates between two states in response to an input... Read More
20160364 – An electronic spintronic-based circuit device transmits a voltage from an input to an output in an energy efficient, fast and low-power manner. The device is comprised of an input ferroelectric (FE) capacitor and an output FE capacitor, each magnetically coupled to a ferromagnetic (FM) channel beneath the capacitors. When the input FE capacitor receives an input signal, it causes a... Read More
20140063 – An optical interconnect can be used as the interconnect in spin-based computation and logic systems. The spin-optical interconnect scheme consists of a spin-to-optical transmitter and an optical-to-spin receiver, which are connected with multichannel, integrated optical waveguides or fibers. For data transmission, a spin-based signal is converted to an optical signal and transmitted via... Read More
20130219 – Computational-RAM (CRAM) technology featuring a low-power, non-volatile processor architecture produces very high computational performance. The technology conserves power by integrating computational elements into memory arrays so that data no longer needs to move to a separate location for processing. Since data does not have to be accessed sequentially through the interconnect network,... Read More
20150177 – A first-ever magnetic brain array can modulate (stimulate) neuron cells and other biological components sensitive to magnetic fields. The array offers low energy consumption and high density, and consists of magnetic tunneling junction (MTJ) sensors for 3D mapping with potential for closed-loop operation. The technique generates magnetic fields for biomedical applications by rotating a... Read More
20170082 – A novel spin-transfer torque operated magnetic tunnel junction (STT-MTJ) thermal sensor device fulfills thermal detection and overheat protection on integrated circuits at a significantly smaller scale. The sensor features a lower cost of calibration and a much faster (more than tenfold) thermal transit response speed over traditional CMOS thermal sensors. The MTJ sensor shows potential... Read More
20110171 – The increased miniaturization of CMOS logic devices (complementary metal-oxide semiconductor), which is the dominant technology for constructing integrated circuits, have led to challenges such as increased power dissipation and device variability. Moore’s law for CMOS is approaching fundamental physical limits. There is a concerted effort to identify alternative or hybrid technologies... Read More
20100014 – Nanoparticles such as FeCo-FeCoO, FeCo-Au, FeCo-SiO2, Fe-Ag, Co-Au, C, Fe-Au are currently limited to laboratory scale production due to a lack of a system to produce these nanoparticles in large quantities. But a nanoparticle synthesis system has been designed that produces unique nanoparticles including gold shells with high crystallinity and high magnetic moment nanoparticles on an... Read More
20110105 – The highly sensitive magnetic-based biomolecule detection system can identify the presence of antigens, DNA fragments, biomarkers or other biomolecules using magnetic nanoparticles, an applied magnetic field and a giant magnetoresistance (GMR) sensor that detects the presence of nanoparticle tagged biomolecules based on changes in the measured magnetic field. This sensor may provide four... Read More
20100020 – Biologically active agents can be detected using a giant magnetoresistor (GMR) sensor and magnetic nanoparticle based coloring. Current optical fluorescence based techniques have low signal to noise and require bulky and expensive equipment. The magnetic biomedical sensor provides a low cost, high throughput, portable and high signal to noise method of detection. The magnetic signal can... Read More
20120016 – Rare earth magnets are the strongest type of permanent magnets made and are integral to the high tech industry, particularly in clean energies, such as electric vehicle motors and wind turbine generators. China extracts and produces about 95% of the world's rare earth minerals and since 2010 has cut its exports. In addition to supply chain concerns, the extraction process is highly... Read More
